Noise Research Laboratory 

Gijs Bosman
Ph.D. Utrecht (The Netherlands), 1981,
Professor and Graduate Coordinator

Email:gbosm@ece.ufl.edu
Office: (352)392-0910
Fax:    (352)392-8381

Address: Dept. of Elec. and Comp. Engineering
         565 New Engineering Building
         Gainesville, FL 32611-6130

Research Interests:

  • Electrical  noise and charge transport in semiconductor devices including modeling , measurements and simulation. Devices include currently  traditional silicon devices as well as CNT tubes and GaN wires and HEMTS.
  • Noise spectroscopy to gain insight into defect structures that affect charge transport and device reliability.
  • Solar cell device research.

 Some Recent Journal and Conference Publications:

<>Refereed Journal Publications
<>
  • <>Shahed Reza, Quyen T. Huynh, Gijs Bosman, Jennifer Sippel, and Andrew G. Rinzler, “ 1/f  Noise in Metallic and Semiconducting Carbon Nanotubes,” J. Appl. Physics, vol. 100, 094318 (2006).
  • <>Shahed Reza, Gijs Bosman, M. Saif Islam, Theodore I. Kamins, Shashank Sharma, and R. Stanley Williams, “Noise in Silicon Nanowires,” IEEE Trans. on Nanotechnology , vol. 5 (5), pp. 523-529, 2006.
  • Shahed Reza, Quyen T. Huynh, Gijs Bosman, Jennifer Sippel, and Andrew G. Rinzler, “ Thermally Activated Low Frequency Noise in Carbon Nanotubes,” Journal of Applied Physics, vol. 99, 11, 2006. Art. No. 114309. Also published in the Virtual J. of  Nanoscale Science and Tech., vol. 13 (24), 2006.
  • Robert Dieme, Gijs Bosman, Toshikazu Nishida, and Mark Sheplak, “ Sources of excess noise in silicon piezoresistive microphones,” J. Acoustic Soc. Am., vol. 119, pp. 2710-2720, 2006.
  • Jing Guo, Sayed Hasan, Ali Javey, Gijs Bosman, and Mark Lundstrom, “”Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistor,” IEEE Trans. on Nanotechnology, vol. 4, pp. 715-721, 2005.
  • Shahed Reza, Gijs Bosman, Charles Saylor, and George R. Duensing, “Time required for a specified level of accuracy in noise correlation measurements,” Fluctuations and Noise Letters, vol. 4, ppL623-L633, 2004.
  • Jonghwan Lee and Gijs Bosman ,”1/f drain current noise model in ultrathin oxide MOSFETs”’ Fluctuations and Noise Letters, vol. 4, ppL297-L307, 2004.
  • Jonghwan Lee, Gijs Bosman, Keith R. Green and Don Ladwig ,”Noise model of gate leakage current in ultrathin oxide MOSFETs,” IEEE Trans. Electron Devices, vol. 50, pp. 2499-2506, 2003.
  • <> Jonghwan Lee, Gijs Bosman, “Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies,” Solid-State Electronics, vol 48, pp. 61-71, 2004.
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Refereed Conference Publications

  •  <>G. Bosman, S. Reza “Low Frequency Excess Noise in Carbon Nanotubes,” Proceedings of the19 th International Conference on Noise and Fluctuations, Tokyo, Japan, pp. 251-256, 2007. American Institute of Physics Conference Proceedings 922, Invited.
  • <>G. Bosman, D. O. Martin, S. Reza, ”Assessing the 1/f noise contributions of accidental defects in advanced semiconductor devices” Proceedings of  the SPIE  Noise and Fluctuations in Circuits, Devices , and Materials, volume 6600, 06, Florence, Italy, 2007. Key-note.
  • <>S. Reza, Q. T. Huynh, G. Bosman, J. Sippel, and A. G. Rinzler, “Excess Noise in Carbon Nanotubes,” Proceedings of the18 th International Conference on Noise and Fluctuations, Salamanca, Spain, pp. 458-461, 2005. American Institute of Physics Conference Proceedings 780.
  •  S. Reza, Q. T. Huynh, G. Bosman, J. Sippel, and A. G. Rinzler, “The Temperature Dependence of Low Frequency Noise in Carbon Nanotubes,” Proceedings of  UPON4, Gallipoli, Italy, pp. 444-448, 2005. American Institute of Physics Conference Proceedings 800.
  • S. Reza, G. Bosman, G. Duensing, F. Huang and C. Saylor, “Image guided Noise Tomography for increase specificity of Magnetic Resonance Imaging”, 3rd SPIE International Symposium on Fluctuations and Noise, 2005.
  • S. Reza, F. Huang, G. Bosman, G. Duensing, M. Limkeman and C. Saylor, “MR-Noise Tomography: extracting information from noise”, ISMRM 13th Scientific Meeting & Exhibition, 2005.
  • R. Dieme, G. Bosman, M. Sheplak, and T. Nishida, “Sources of Excess Noise in Silicon Piezoresistive Microphones,” 148th Meeting Acoustical Society of America, San Diego, CA, 2004.
  • J.H. Lee and G. Bosman, “Correlation noise measurements and modeling of nanoscale MOSFETs,” Proceedings of the NATO Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, August 14-16, 2003, Brno, Czech Republic, J. Sikula, Editor. Kluwer Publishers.  Invited.
  • J.H. Lee and G. Bosman, “1/f gate and drain noise characterization of ultrathin oxide MOSFETs,” Proceedings of the 17th International Conference on Noise and Fluctuations ICNF 2003, pp. 565-570. Prague, Czech Republic, J. Sikula, Editor. Invited.
  • G. Bosman, F.-C. Hou, D. O. Martin, J. E. Sanchez, ”Computer simulation and reverse engineering of trap assisted generation-recombination noise in advanced silicon  MOSFETs,” Proceedings of  the SPIE  Fluctuations and Noise Symposium on Noise in Devices and Circuits, pp. 232-236, 2003. Santa Fe, New Mexico. Invited.

Teaching Areas:
    EEL3396 "Solid-State Electronic Devices," EEL5091 "Applied Quantum Mechanics for Nano-Devices'", Junior Design, Senior Design, and Intergrated Proces and Product Design.



Current Students:
Hemant Rao researches the reliability of GaN and compound semiconductor devices using noise spectroscopy and computer simulation.

Ramya Sankar studies the charge transport properties of GaN wires.

Erdem Cicek researches the temperature dependence of excess noise in GaN wires.